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1-4. Development of High-performance Dielectric Materials Based on Vapor-phase Deposited Polymer Film

| Participants

member
member_detail
Name :Sung Gap Im
Affiliation :KAIST
Tel :+82-42-350-3936
E-mail :sgim@kaist.ac.kr
Homepage :http://ftfl.kaist.ac.kr

| Research Purpose

This project aims to develop polymer-based dielectric materials using initiated chemical vapor deposition (iCVD) process and its application to low-power, highly flexible electronic devices and circuits. In addition, we develop a sub-micron-thick adhesive material platform which can be utilized to laminate various types of film/substrate pairs, which is critically important for the integration of flexible, soft electronic devices.

| Contents

Topic 1. Development of highly flexible dielectric materials using iCVD process

• Synthesis of polymer-based dielectric material using iCVD.
• Optimization of iCVD process in order to secure excellent insulating performance as well as outstanding flexibility/stretchability of dielectric layer.
• Development of various flexible electronic device based on the iCVD dielectrics.


Development of flexible dielectric materials using iCVD process and its application to soft electronic devices

Topic 2. Development of nano-adhesive thin film using iCVD process

• Development of an iCVD polymer-based sub-micron-thick, highly flexible nano-adhesive material and adhesion platform.
• Development of integration technology directly applicable to the fabrication of wearable electronic device by bonding various soft electronic film panels.


Development of nano-adhesive technology using iCVD process and application to wearable electronics

Topic 3. Optimization of flexible electronic device and development of patterning technology of iCVD polymer dielectric for integrated circuits

• Performance optimization of organic and 2D semiconductor devices with iCVD polymer dielectrics.
• Development of patterning technology of iCVD polymer film with high uniformity and pattern fidelity with maintaining the superior insulating property.
• Design and demonstration of organic integrated circuit based on patterned iCVD dielectric.
• Development of soft integrated circuit using multi-layer device structure.


| Expected Contribution

- Developing novel polymer-based flexible dielectric materials capable of replacing conventional inorganic dielectric materials and providing a powerful platform for the development of next-generation flexible electronic device products with various form-factors. - Securing the compatibility of iCVD polymer dielectric with organic, low-dimensional semiconductors which are regarded as core materials for wearable electronic devices, leading to realization of high-performance flexible electronic devices made thereof. - Developing highly flexible, low-power logic/integrated circuit technology with high reliability and stability for realization of internet of things (IoT) system. - Enabling the miniaturization of electronic device by development and optimization of nano-adhesive thin film, minimizing damage to electronic device during the bonding process, and integrating various device layers with the developed nano-adhesive system for realization of high-performance wearable electronics.

| Representative Research Achievement

1. H. Moon, H. Seong, W. C. Shin, W. -T. Park, M. Kim, S. Lee, J. H. Bong, Y. –Y. Noh, B. J. Cho, S. Yoo, S. G. Im, Nat. Mater. 2015, 14, 628.
2. H. Seong, K. Pak, M. Joo, J. Choi, S. G. Im, Adv. Electron. Mater. 2016, 2, 1500209
3. B. -H. Lee, D. Lee, H. Bae, H. Seong, S.-B. Jeon, M.-L. Seol, J.-W. Han, M. Meyyappan, S. G. Im, Y. -K. Choi, Sci. Rep. 2016, 6, 38389.
4. J. -W. Seo, M. Joo, J. Ahn, T. -I Lee, T. –S. Kim, S. G. Im, J. -Y. Lee, Nanoscale 2017, 9, 3399.